| PART |
Description |
Maker |
| KM416C254D KM416V254D KM416C254DJL-5 KM416C254DJL- |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, self-refresh
|
Samsung Electronic
|
| KM416C1004C-5 KM416C1004C-L45 KM416C1004C-L5 KM416 |
1M X 16BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT
|
SAMSUNG[Samsung semiconductor]
|
| KM416C1200C KM416V1200C KM416V1000C KM416C1000C |
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| KM416V4100B KM416V4000B KM416V4000BS-6 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| V53C16256 V53C16256H V53C16256HK60 |
256K x 16bit fast page mode CMOS dynamic RAM
256K x 16 FAST PAGE MODE CMOS DYNAMIC RAM
|
MOSEL[Mosel Vitelic, Corp]
MOSEL[Mosel Vitelic Corp]
Mosel Vitelic Corp
|
| KM416C1000C |
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
|
Samsung semiconductor
|
| KM44V4104BK KM44V4104B |
4M x 4Bit CMOS Dynamic RAM
V(cc): -0.5 to 4.6V; 1W; 50mA; 4M x 4-bit CMOS dynamic RAM with extended data out
|
Samsung semiconductor
Samsung Electronic
|
| K4F151611 K4F151611D K4F151612D K4F171611D K4F1716 |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4K refresh cycle.
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle.
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 1K refresh cycle.
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K4E640812B K4E660812B K4E640812B-JC-45 K4E640812B- |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns
8M x 8bit CMOS dynamic RAM with extended data out, 50ns
8M x 8bit CMOS dynamic RAM with extended data out, 60ns
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| KM48V8100B |
8M x 8Bit CMOS Dynamic RAM with Fast Page Mode(8M x 8浣?CMOS ?ㄦ?RAM(甯?揩??〉妯″?))
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| GM72V661641D GM72V661641DI GM72V661641DLI |
1,048,576WORD X 16BIT X 4BANK SYNCHRONOUS DYNAMIC RAM 1,048,576字16Bit的X 4BANK同步动态RAM
|
Electronic Theatre Controls, Inc.
ETC
List of Unclassifed Manufacturers
|
